HP-Agilent/Keysight B1505A

Precision measurement across a wide range of operating conditions – All-in-one solution for power device characterization up to 1500 A & 10 kV – Medium current measurement with high voltage bias (e.g. 500 mA at 1200 V) – μΩ on-resistance measurement capability – Accurate, sub-picoamp level, current measurement at high voltage bias – Fully automated thermal testing from -50 ℃ to +250 ℃ Extensive device evaluation capabilities – Fully automated Capacitance (Ciss, Coss, Crss, etc.) measurement at up to 3000 V of DC bias – High power pulsed measurements down to 10 μs – Both packaged device and on-wafer IGBT/FET gate charge measurement – High voltage/high current fast switch option to characterize GaN current collapse effect – Up to five high voltage (3 kV) source/measure channels for maximum flexibility – Safe temperature dependent testing via an interlock-equipped test fixture Improved measurement efficiency – Switch between high-voltage and high-current measurements without the need to recable – Automatic test circuit formation for transistor junction capacitances (Ciss, Coss, Crss, Cgs, Cgd, Cds, etc.) for both packaged and on-wafer devices – Standard test fixtures with interlock for safe packaged power device testing – Supported and secure on-wafer high-power testing over 200 A and up to 10 kV – Oscilloscope view allows verification of applied voltage and current waveforms – MS Windows-based EasyEXPERT software facilitates data management and analysis Upgradable and scalable hardware architecture – A wide selection of measurement modules – Support for high power devices with up to 6 pins